Enhancing Community and Creating Unity Using a Mobile Application
Cast your vote
You can rate an item by clicking the amount of stars they wish to award to this item.
When enough users have cast their vote on this item, the average rating will also be shown.
Your vote was cast
Thank you for your feedback
Thank you for your feedback
Keywordcomputer application design
computer application research
mobile application design
MetadataShow full item record
AbstractThis project involves the creation of a prototype mobile application for a multi-cultural community center in Utica, NY, the Midtown Utica Community Center (MUCC). It is an inclusive multicultural and refugee-friendly space for members to come and join in on different programs, activities, and services that the center offers. Hundreds of families utilize the open and welcoming space on a weekly basis and it serves as a place for them to congregate and come together. It is a place filled with heritage and members who are friends, but see themselves as family. This is where the idea for a mobile application stemmed from. This mobile application would be used by both members and nonmembers of the community center, as well as the staff, executive board, and volunteers. The goal of the application is to enhance the sense of community and bring a feeling of unity to the members of the organization. In this unique scenario, since the application is being built for a community center, the sense of “community” is already present—the utilization of technology such as a mobile application will only enhance, build upon, and create a sense of unity for the current and soon-to-be members of this organization. For the most part, members of this center are made up of various youth age groups. In this paper, I will explore research that has been conducted on the use of mobile technology and applications by youth as well as ways to keep them engaged and interacting with an application on a daily basis. Another area for exploration is the idea of using the application to an application on a daily basis. Another area for exploration is the idea of using the application to be in two places at once, to communicate with peers even though they may not physically be present at the center.
DescriptionA thesis project presented to the Department of Communications and Information Design, SUNY Polytechnic Institute, in partial fulfillment of the requirements of the Master of Science degree.
Showing items related by title, author, creator and subject.
Application of the Scientific MethodEnglert, Lisa; The College at Brockport (2006-08-08)1.Students will study the concept of diffusion 2.Students will incorporate technology into the Science classroom
To Upgrade or Not To Upgrade ApplicationStam, Kathryn; Thesis Advisor; Lizardi, Ryan; Second Reader; Francisco, Neil (2021-05)New Technology consists of new hardware devices, computational workflows, digital advances, and information systems. As technology continues to evolve over the years, this never-ending cycle of new devices and experiences will always be present amongst consumers. Traditionally, new hardware devices are intriguing because they are designed to improve our access to information, media, and a connection to the digital world, but does this mean our previous-gen devices are no longer valuable? This project involves creating a prototype application designed for both computer and mobile interfaces to help improve the accessibility to information and the overall user experience with an older device. The “To Upgrade or Not To Upgrade” app will inform end-users of their older technological device specifications and suggest hardware/software methods to unlock their full potential. The goal of this paper is to shed some light on consumers that upgrading to the following gen devices is not always necessary to receive the best human-to-computer interactions. It is likely the computer or mobile device that one owns now, with some slight modifications, is all that is needed to provide a pleasant experience.
Development of High-Performance Hafnium Oxide based Non-Volatile Memory Devices on 300mm Wafer Platform for Data Storage and Neuromorphic ApplicationsDiebold, Alaine (Committee member); Ventrice, Carl A. Jr. (Committee member); Lloyd, James (Committee member); Kurinec, Santosh (External committee member); Cady, Nathaniel (Dissertation Committee Chair); Hazra, Jubin (2021-08)Fundamental limitations associated with scaling and modern von Neumann computing architectures illustrates the need for emerging memory solutions in the semiconductor industry. One such promising non-volatile memory (NVM) solution is resistive random access memory (RRAM), which is seen as a potential candidate that can meet the performance needs of DRAM and the density of NAND Flash in terms of scalability, reliability and switching performance. However, reliable operation of RRAM devices requires further development to remedy device- to-device and cycle-to-cycle uniformity variation, increase the conductance window, and to improve retention, yield and endurance properties. This research work primarily focuses on improving RRAM performance metrics through optimization of processing conditions and programming algorithms for CMOS-integrated nanoscale HfO2 RRAM devices on a full scale 300mm wafer platform. It was observed that tuning of ALD parameters during RRAM switching layer HfO2 deposition had a significant impact on device switching performance. An excellent memory window of >30 with switching yield ~90%, along with low cycle-to-cycle (σ <0.5) and cell-to-cell variability (σ <0.4) were achieved for tested 1 Transistor 1 RRAM (1T1R) cells across full 300mm wafers. The devices demonstrated excellent endurance (>1010 switching cycles) and data retention performance at elevated temperature (105 s at 373K). The fabricated RRAM cells were also optimized for multi-level-cell switching behavior and ~10 distinct resistance levels were obtained through a combined current- and voltage-control based programming approach. An incremental pulse write technique combined with read verification algorithm enabled accurate resistance states programming within a large resistance window along with linear and symmetric potentiation-depression characteristics yielding superior analog synaptic functionality of fabricated RRAM devices. In addition to RRAM devices, hafnium zirconium oxide (HZO) based nanoscale ferroelectric tunnel junction (FTJ) devices were successfully implemented on a 300 mm wafer platform. Current measurement, as a function of voltage for both up and down polarization states, yielded a tunneling electroresistance (TER) ratio of ~5 and switching endurance up to 106 cycles in TiN/ Al2O3/ Hf0.5Zr0.5O2/ TiN FTJ devices distributed across full 300 mm wafer. Investigation of current transport mechanisms showed that the conduction in these FTJ devices is dominated by direct tunneling (DT) at low electric field and by Fowler-Nordheim (F-N) tunneling at high electric field. The realization of CMOS-compatible nanoscale RRAM and FTJ devices on 300mm wafers demonstrates the promising potential of these devices in large scale high-yield NVM manufacturing for high performance embedded memory and mass data storage applications.