Show simple item record

dc.contributor.authorChih-Fang Liu, Eric
dc.date.accessioned2022-09-02T19:53:05Z
dc.date.available2022-09-02T19:53:05Z
dc.date.issued2022-06
dc.identifier.urihttp://hdl.handle.net/20.500.12648/7534
dc.description.abstractPattern variations can cause challenges in device scaling. Since the last few decades, the semiconductor industry has successfully utilized the device scaling technique by reducing the transistor area to meet the requirements needed for optimum device performance and fabrication cost during each generation of development. The main challenges in the development of this technique are imaging resolution and pattern variations. Extreme ultraviolet (EUV) lithography and the multiple-patterning method can be used to push the imaging resolution to sub-30 nm. This thesis investigates the mechanism of pattern variations and proposes methods for pattern improvement. The thesis begins by investigating the origin of pattern variations in an EUV–chemically amplified photoresist system. The experimental results show that the chemical composition and inhomogeneity of the material contribute to pattern variations in EUV lithography. A difference in the localized-material-removal rate indicates the contribution of stochastics chemical kinetics in the photoresist during the development process. The study then investigates the effects of the plasma etching process on the pattern variations. The plasma etching process can alter the pattern variations by modifying the etching behavior and the etching selectivity. The thesis also discusses the system-level or integrated process-induced pattern variations. The method proposed herein involves surface modification and tone inversion technique and reduces the line edge roughness by 26% on a 20-nm pitch line pattern. Using a multicolor line-cut process, the thesis experimentally demonstrated the control of the edge-placement error from system-level pattern variations.en_US
dc.language.isoen_USen_US
dc.subjectExtreme ultraviolet (EUV) lithographyen_US
dc.subjectMultiple-patterning methoden_US
dc.subjectImaging resolutionen_US
dc.subjectPattern variationsen_US
dc.subjectPlasma etching processen_US
dc.subjectSystem-level pattern variationsen_US
dc.titleResist and Process Pattern Variations in Advanced Node Semiconductor Device Fabricationen_US
dc.typeDissertationen_US
dc.description.versionNAen_US
refterms.dateFOA2022-09-02T19:53:06Z
dc.description.institutionSUNY Polytechnic Instituteen_US
dc.description.departmentDepartment of Nanoscale Science & Engineeringen_US
dc.description.degreelevelPhDen_US
dc.description.advisorBrainard, Robert
dc.description.advisorGalis, Spyridon
dc.description.advisorHan, Yun
dc.description.advisorKal, Subhadeep
dc.description.advisorDenbeaux, Greg


Files in this item

Thumbnail
Name:
Eric Liu - PhD Thesis - RESIST ...
Size:
4.678Mb
Format:
PDF
Description:
Final Dissertation Submission
Thumbnail
Name:
Non-exclusive distribution license ...
Size:
427.2Kb
Format:
PDF
Description:
Distribution license
Thumbnail
Name:
PhD Dissertation approval form.pdf
Size:
382.2Kb
Format:
PDF
Description:
Dissertation Approval Form

This item appears in the following Collection(s)

Show simple item record