Confocal Fluorescence Mapping of Doped Single BiVO4 Semiconductor Crystals

Abstract

The fluorescence intensity distribution of BiVO4 semiconductor crystals and its dopant variants N-BiVO4 and P-BiVO4 was measured using a confocal microscope at the single crystal level. Scanning electron microscopy (SEM) was used to learn more about the crystal shape and morphology. The intensity data revealed that N-BiVO4 crystals have a higher mean intensity than non-doped and P-BiVO4, by lowering the conduction and valence energy bandgap.